利用射频磁控溅射技术成功地在Si衬底上沉积Ni-Mn-Ga薄膜,并采用XRD、SEM、AFM及 EMPA系统研究Ni-Mn-Ga薄膜的晶体学结构、断面形貌、表面形貌、成分及其影响规律.结果表明,经823K退火1h Ni-Mn-Ga薄膜完全晶化,室温下呈L21型体心立方结构;断面形貌揭示Ni-Mn-Ga薄膜呈柱状结构.Ni-Mn-Ga薄膜的表面粗糙度随溅射功率和溅射时间的增加而增大;Ni-Mn-Ga薄膜中Ga的含量受溅射功率影响较大,Ni的含量受溅射时间影响较大.
参考文献
[1] | Ullakko K;Huang J K et al.[J].Applied Physics Letters,1996,69(13):1966-1968. |
[2] | Sozinov;Likhachev A A et al.[J].Journal de Physique,2003,112:955-958. |
[3] | Murray S J et al.[J].Applied Physics Letters,2000,77(06):886-888. |
[4] | Ullakko K;Huang J K et al.[J].Scripta Materialia,1997,36(10):1133-1138. |
[5] | O'Handley RC. .Model for strain and magnetization in magnetic shape-memory alloys[J].Journal of Applied Physics,1998(6):3263-3270. |
[6] | Dong J W;Palmstrm C J .[J].Applied Physics Letters,1999,75(10):1443-1445. |
[7] | Dong J W;Xie J Q et al.[J].Journal of Applied Physiology,2004,95(05):2593-2600. |
[8] | Wutting M;Craciunescu C et al.[J].Materials Transactions-Japan Institute of Metals,2000,41(08):933-937. |
[9] | Rumpf H;Feydt J et al.[J].Proceedings of Spie,2003,5053:191-199. |
[10] | Tello P G;Castan(o) F J et al.[J].Journal of Applied Physics,2003,91(10):8234-8236. |
[11] | Suzuki M;Ohtsuka M et al.[J].Materials Transactions,1999,40:1174. |
[12] | Ohi K Isokawa et al.[J].Transactions of the Materials Research society of Japan,2001,26:291. |
[13] | Ohtsuka M Itagaki et al.[J].International Journal of Applied Electromagnetics and Mechanics,2000,12:49. |
[14] | Webster J .[J].PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANIC,1984,49(03):295. |
[15] | Thornton J A .[J].Journal of Vacuum Science and Technology,1974,11:666. |
[16] | Thornton J A .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1986,4:3059. |
[17] | Karunasiri P U;Bruinsma R;Rudnick K .[J].Physical Review Letters,1989,62:788. |
[18] | Bales G S;Zangwill A .[J].Science,1990,249:264. |
[19] | Messier R;Yehoda J E .[J].Journal of Applied Physics,1985,58:3739. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%