应用新型溶胶--凝胶法制备了ZnO陶瓷薄膜, 研究了退火温度对ZnO陶瓷薄膜低压压敏电阻电性能的影响. 结果表明, 采用溶胶掺杂在550℃退火条件下可形成Zn$_{7}$Sb$_{2}$O$_{12}$及ZnCr$_{2}$O$_{4}$相, 且在退火温度范围内(550$\sim$950℃)基本上没有焦绿石相形成. 当退火温度达到750℃以后, Sb$_{2}$O$_{3}$已全部转变为稳定性好的尖晶石相, 同时存在Bi$_{2}$O$_{3}$、 ZnO的挥发. 采用适当的退火温度, 可得到具有优良电性能的ZnO陶瓷薄膜低压压敏电阻, 其压敏电压低于5 V, 非线性系数可达20, 漏电流密度小于0.5 $\mu$A/mm$^{2}$.
The effect of annealing temperature on the electrical properties of low voltage ZnO--based ceramic film was investigated. The results show that Zn$_{7}$Sb$_{2}$O$_{12}$ and ZnCr$_{2}$O$_{4}$ phases can be formed at a lower annealing temperature (550℃) by the solution doping, and the pyrochlore phase is not detected by XRD from 550℃ to 950℃. Sb$_{2}$O$_{3}$ can be changed to spinel phase completely, and Bi$_{2}$O$_{3}$, ZnO may be vaporized when the annealing temperature reaches 750℃. The ZnO--based ceramic films with nonlinearity coefficient 20, ~nonlinear ~voltage ~5 V ~and ~the ~leakage ~current ~density 0.5 $\mu$A/mm$^{2}$ can be obtained by the proper annealing temperature.
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