概述了GaN异质外延生长中衬底的选择以及缺陷的形成机理,从缓冲层技术、横向外延技术、柔性衬底技术等生长工艺方面综述了国内外GaN基半导体薄膜生长的最新研究和进展,并对其优缺点进行了分析比较,认为发展同质外延将有希望解决现在异质外延生长中存在的问题,最后展望了GaN基薄膜同质外延生长的前景.
Selection of substrate and mechanism of defect in GaN heteroexpitaxy growth are summarized, then the research status and progress of GaN-based film growth are reviewed in terms of buffer layer technology, expitaxial lateral overgrowth, flexible substrates and other heteroexpitaxy technologies. Meanwhile, the advantages and disadvantages of these growth technologies are compared and analyzed, and isoepitaxialgrowth of GaN-based film is regarded as the most prospective method which can avoid the lattice dismatch and thermal dismatch existing in heteroexpitaxy growth. Finally, the prediction of isoepitaxialgrowth of GaN-based film is given.
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