The effect of magnetic field on the growth behavior of compound layer was examined at the interface between the solid Cu and liquid Al during reactive diffusion. It was found that the thickness of compound layer was reduced by the high magnetic field. The growth activation energy in β, γ1 and "2 layers under a high magnetic field was larger than those in non magnetic circumstances, the increment percentage being 4.8%, 13.3% and 5.5%, respectively.
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