过渡金属二硫族化合物(Transition-metal dichalcogenides,TMDs)作为一组二维材料具有丰富的物理特性,近几年因其半导特性在半导体器件上具有重要的应用前景而引其了学界的普遍关注.总结了TMDs材料的制备方法及其在场效应管(FET)上的应用研究进展,并对存在的问题以及潜在的研究方向做了展望.
As a set of two-dimensional materials,transition-metal dichalcogenides(TMDs) have abundant physical properties and have attracted the attention of the academic circles for the important application prospects of its semiconducting properties in semiconductor devices in recent years.The preparation methods of TMDs materials and the progress on their application in field effect transistors are summarized,while the existing problems and potential research directions are proposed.
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