结合紫外-可见光谱和高分辨XRD两种测试方法,无损、可靠地确定了AlGaN/GaN HEMT结构内各层的厚度、成分、应力等参数,解决了高分辨XRD无法同时确定成分与应力的难题.这两种方法的好处是样品不需经过特殊的处理,也不需进行切割、减薄等工艺,具有快速、无损、准确的特点,可以作为AlGaN/GaN HEMT器件的筛选工具,提高器件的成品率、降低生产成本.
参考文献
| [1] | Green D S;Gibb S R et al.[J].Journal of Crystal Growth,2004,272(1-4):285. |
| [2] | Sirenko A A;Kazimirov A et al.[J].Applied Physics Letters,2006,89:181926. |
| [3] | Johnson M A L;Fujita S et al.[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1996,B14(03):2349. |
| [4] | Wagner V;Parilaud O et al.[J].Journal of Applied Physics,2002,92(03):1307. |
| [5] | Loke WK.;Yoon SF.;Wang SZ.;Ng TK.;Fan WJ. .Rapid thermal annealing of GaNxAs1-x grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence[J].Journal of Applied Physics,2002(8):4900-4903. |
| [6] | 傅竹西,林碧霞,何一平,廖桂红.ZnO薄膜的反射、透射光谱及能带结构测量[J].发光学报,2002(06):559-562. |
| [7] | 张永刚.基于反射谱的GaN薄膜厚度在线测量系统[J].电子质量,2004(12):56-57. |
| [8] | 郜小勇,赵剑涛,刘绪伟.蓝宝石衬底上GaN薄膜的结构和光学特性表征[J].人工晶体学报,2006(05):1071-1074. |
| [9] | Yu L S;Qiao D et al.[J].Journal of Applied Physics,1999,86(05):2697. |
| [10] | Muth J F;Brown J D et al.[J].MRS Internet Journal of Nitride Semiconductor Research,1999,4S1:G52. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%