利用电子回旋共振CVD设备制备了一种硫系GeSbTe薄膜,并用纳米硬度计考察了其抗压性能,同时采用划痕实验以及摩擦力显微镜研究了GeSbTe薄膜的摩擦特性.结果表明:GeSb2Te4膜的微观抗载荷性能随着膜厚的增加而显著增强;对于90nm厚度的GeSb2Te4来说,施加1000霳左右的载荷所获得的硬度和弹性模量值受基体的影响较小,分别为2.07GPa、38.70GPa;湿度对Ge2Sb2Te5膜和针尖粘附的影响没有GeSb2Te明显,而且粘附力的存在会改变摩擦系数.
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