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本文以超白玻璃为衬底,利用热丝化学气相沉积和磁控溅射法制备了Glass/nc-Si/Al的叠层结构,然后置于管式退火炉中在H2气氛下进行5h诱导晶化,用XRD、光学显微镜、扫描电镜和拉曼光谱对样品进行了表征.结果表明所有样品都是有(111)择优取向的多晶硅薄膜,在425℃诱导时,多晶硅晶粒尺寸最大达400 μm,但薄膜不连续;随着诱导温度升高到450℃,样品表面已形成了连续的多晶硅薄膜,但晶粒尺寸有所减小;475℃下诱导获得的最大晶粒尺寸约为200μm,此时多晶硅薄膜的结晶质量更好.还从动力学的角度分析了铝诱导纳米硅的晶化机理.

参考文献

[1] 杨德仁.太阳电池材料[M].北京:化学工业出版社,2009:235-237.
[2] Im J S;Kim H J .Phase Transformation Mechanisms Involved in Excimer Laser Crystallization of Amorphous Silicon Films[J].Applied Physics Letters,1993,63(14):1969-1971.
[3] Ekanayake G;Quinn T;Reehal HS .Large-grained poly-silicon thin films by aluminium-induced crystallisation of microcrystalline silicon[J].Journal of Crystal Growth,2006(2):351-358.
[4] 唐正霞 .铝诱导多晶硅薄膜的制备、性能及生长机理研究[D].南京航空航天大学,2010.
[5] Zhengxia Tang;Honglie Shen;Haibin Huang;Linfeng Lu;Yugang Yin;Hong Cai;Jiancang Shen .Preparation of high quality polycrystalline silicon thin films by aluminum-induced crystallization[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2009(19):5611-5615.
[6] Large-Grain Polycrystalline Silicon Solar Cell on Epitaxial Thickening of AIC Seed Layer by Hot Wire CVD[J].IEEE Electron Device Letters,2010(1):38.
[7] I. Gordon;L. Carnel;D. Van Gestel;G. Beaucarne;J. Poortmans .Fabrication and characterization of highly efficient thin-film polycrystalline-silicon solar cells based on aluminium-induced crystallization[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(20):6984-6988.
[8] Kim J H;Lee J Y .Al-Induced Crystallization of an Amorphous Si Thin Film in A Polycrystalline Al/Native SiO2/Amorphous Si Structure[J].Japanese Journal of Applied Physics,1996,35(4 A):2050-2056.
[9] 唐正霞,沈鸿烈,解尧,鲁林峰,江枫,沈剑沧.100μm大晶粒多晶硅薄膜的铝诱导法制备[J].功能材料,2010(03):453-456.
[10] Oliver Nast;Andreas J. Hartmann .Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon[J].Journal of Applied Physics,2000(2):716-724.
[11] 陈焘,罗崇泰.薄膜应力的研究进展[J].真空与低温,2006(02):68-74.
[12] Oliver Nast;Stephan Brehme;Dirk H. Neuhaus;Stuart R. Wenham .Polycrystalline silicon thin films on glass by aluminum-induced crystallization[J].IEEE Transactions on Electron Devices,1999(10):2062-2068.
[13] Al-Barghouti M;Abu-SafeH;Naseem H et al.The Effect of an Oxide Layer on theKinetios of Metal-induced Crystallization of A-Si:H[J].Journal of the Electrochemical Society,2005,152(05):354-360.
[14] Hecht M H;Vasquez R P;Grunthaner F J et al.A Novel X-ray Photoelectron Spectroscopy Study of The Al/SiO2 Interface[J].Journal of Applied Physics,1985,57:5256-5261.
[15] 焦栋茂,王新征,李洪涛,郭烈萍,蒋百灵.退火时间对铝诱导非晶硅薄膜晶化过程的影响[J].人工晶体学报,2011(02):370-373,378.
[16] 梁戈,郭烈萍,李洪涛,蒋百灵,焦栋茂.铝层厚度对铝诱导非晶硅薄膜晶化过程的影响[J].人工晶体学报,2011(01):114-118.
[17] 金仲和,王跃林.金属诱导非晶硅横向结晶机理研究[J].电子学报,2001(08):1079-1082.
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