半导体纳米薄膜热电性能表征技术的研究进展

材料导报, 2007, 21(3): 1-4.

半导体纳米薄膜热电性能表征技术的研究进展

肖承京 ^1, , 杨君友 ^2, , 朱文 ^3, , 鲍思前 ^4, , 樊希安 ^5, , 段兴凯 ^6,

1.华中科技大学材料成型与模具技术国家重点实验室,武汉,430074

2.华中科技大学材料成型与模具技术国家重点实验室,武汉,430074

3.华中科技大学材料成型与模具技术国家重点实验室,武汉,430074

4.华中科技大学材料成型与模具技术国家重点实验室,武汉,430074

5.华中科技大学材料成型与模具技术国家重点实验室,武汉,430074

6.华中科技大学材料成型与模具技术国家重点实验室,武汉,430074

基金项目: 国家自然科学基金(50401008) 国家重点基础研究发展计划(973计划)(2004CCA03200)

关键词：纳米薄膜 , 热电性能 , 表征

Progress of Research on Thermoelectric Properties Measurements of Semiconductor Nano-films

综述了半导体纳米薄膜热电性能表征的方法及相关的技术原理.从平行膜面和垂直膜面两方面对纳米薄膜材料热电性能3种重要参数的表征方法进行了描述;同时简要介绍了能直接测量热电优值的Harman方法的基本原理和操作过程.在此基础上指出了各方法的优缺点,并提出了今后开发检测装置需努力的方向.

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材料期刊网

半导体纳米薄膜热电性能表征技术的研究进展

Progress of Research on Thermoelectric Properties Measurements of Semiconductor Nano-films

参考文献