HfO2薄膜是一种新兴的薄膜材料,在耐高温保护涂层、微电子、催化等领域有着非常重要的应用.HfO2薄膜优异的性能及广阔的应用前景已经引起人们极大的关注.介绍了MOCVD法制备HfO2薄膜前驱体的研究进展和现状,着重讨论了MOCVD工艺中各类前驱体的优缺点,概述了目前研究的热点和进一步研究的方向.最后得出结论:目前使用较多的β二酮类铪配合物自身存在许多不利于MOCVD工艺的缺点,因此混合配体的铪配合物成为进一步研究的焦点.
HfO2 thin films are a new kind film materials,which have a variety of important technological applications in many fields,such as protective coatings for high temperature,dielectric films in microelectronics and catalysis.They have attracted much attention in recent years due to their excellent properties and potential applications.In this paper,the progress and situation in research of precursors for HfO2 thin films by MOCVD are introduced.The advantages and disadvantages of each type of precursors are discussed emphatically.The current focus on research and direction of further study are also summarized.The results is that there are a number of problems going against the MOCVD associated with the Hf (Ⅳ)β-diketonates complexes which are used widely at present,therefore the Hf(Ⅳ) mix-ligand complexes will be the further research focus.
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