Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100)

材料科学技术（英文）, 2014, 30(4): 347-352.

^1, , ^2,

1.Institute of Applied Mechanics, Zhejiang University, Hangzhou 310027, China

2.Institute of Applied Mechanics, Zhejiang University, Hangzhou 310027, China

基金项目: the Science Foundation of Chinese University(Grant 2011QNA4038) the Science and Technology Innovative Research Team of Zhejiang Province(2009R50010) the Scientific Research Fund of Zhejiang Provincial Education Department(Grant Z200906194)

Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100)

Xiaofeng She ^1, , Hongtao Wang ^2,

1.Institute of Applied Mechanics, Zhejiang University, Hangzhou 310027, China

2.Institute of Applied Mechanics, Zhejiang University, Hangzhou 310027, China

Keywords： Thermal stability

参考文献

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[2]	J. Kwo;M. Hong;A. R. Kortan;K. L. Queeney;Y. J. Chabal;R. L. Opila;D. A. Muller;S. N. G. Chu;B. J. Sapjeta;T. S. Lay;J. P. Mannaerts;T. Boone;H. W. Krautter;J. J. Krajewski;A. M. Sergnt;J. M. Rosamilia .Properties of high κ gate dielectrics Gd_(2)O_(3) and Y_(2)O_(3) for Si[J].Journal of Applied Physics,2001(7):3920-3927.
[3]	S. Van Elshocht;C. Adelmann;T. Conard;A. Delabie;A. Franquet;L. Nyns;O. Richard;P. Lehnen;J. Swerts;S. De Gendt .Silicate formation and thermal stability of ternary rare earth oxides as high-k dielectrics[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,2008(4):724-730.
[4]	J. P. Chang;Y.-S. Lin .Thermal stability of stacked high-k dielectrics on silicon[J].Applied physics letters,2001(23):3824-3826.
[5]	T. S. Jeon;J. M. White;D. L. Kwong .Thermal stability of ultrathin ZrO_(2) films prepared by chemical vapor deposition on Si(100)[J].Applied physics letters,2001(3):368-370.
[6]	Y.-S. Lin;R. Puthenkovilakam;J. P. Chang .Dielectric property and thermal stability of HfO_(2) on silicon[J].Applied physics letters,2002(11):2041-2043.

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Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100)

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