用多靶射频磁控溅射技术,在纯氩气氛中不同溅射功率（40～100W）下在Si（100）基底上制备晶体AlCrTaTiNi高熵合金薄膜。同时用四点探针（FPP）X射线衍射（XRD）、场发射扫描电子显微镜（FESEM）及其附带的能谱分析仪对薄膜的电性能和微结构进行表征。分析结果表明AlCrTaTiNi高熵合金薄膜在溅射功率为80W时的晶粒尺寸最大,电阻率最低,为160μΩ.cm左右。同时截面SEM形貌显示形成的晶体并非柱状晶体。
Crystalline structure of AlCrTaTiNi high entropy alloys（HEAs） with lower resistance were prepared by a four targets magnetron sputtering method in pure argon atmosphere.Four-point probe（FPP）,X-ray diffraction（XRD） and scanning electron microscopy（SEM） were used for characterization of electrical property and microstructure.The results show that the grain size is directly related to the power.The grain size is biggest while the power is 80W,meanwhile the electrical resistivity is the lowest,about 160μΩ·cm.Moreover,various cross section morphologies have been evidenced by SEM shows that crystalline structure is not columns.
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