本文提出一个合成TiN硬质薄膜的新方法,在氮气氛中,电子束蒸发沉积Ti的同时,用40keV的氙离子束对其进行轰击而合成TiN薄膜,该方法优于PVD和CVD之处在于合成温度低,薄膜与基体结合力强,其临界载荷达4.2kg,Knoop硬度达2200kg/mm~2,具有良好的耐磨损性能,报道了所合成的TiN薄膜在工业上应用的一些结果。
A new method for preparation of hard TiN films has been developed by electronbeam evaporation--deposition of Ti and bombardment with tens keV Xe~+ ion beam in a N_2 gasenvironment. The TiN film, prepared by Xe~+ ion beam enhanced deposition, is superior to PVDand CVD ones in respects of improved adhension to substrate and low preparing temperature.It exhibited good wear resistance and high Knoop hardness up to 2200 kg / mm~2. Some indus-trial applications have been reported.
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