测定了镍表面阳极氧化膜在ｐＨ＝８．４硼砂－硼酸缓冲溶液中不同电位下的光电流响应。基于阻抗测量结果的计算表明，钝化膜的平带电位和载流子密度分别为－０．６８Ｖ和１．３×１０（２０）ｃｍ（－３）。对钝化膜和高价氧化膜在形成、生长和破坏过程中的光电流变化进行了现场监测。
The photoelectrochemical response of anodic oxide flm on nickel in pH 8.4 borax-borate buffer solution has been investigated. Experimental results show that both passive film and high valence oxide film are n-type semiconductors.The passive film is formed by direct oxidation of nickel on the surface.Its flat band potential and carrier density are -0.68V and 1.3x1020cm-3 respectively.For the high Valence oxide film, a dissolution-deposition process is proposed.During the formation, growth and breakdown of the anodic film, the corresponding changes in photocurrent are monitored. At the initial stage Cl-penetrates into the film, which results in a sudden change in its electronic character and then photocurrent increases remarkably.
参考文献
| [1] | DrQuartoF,PiazzaS,SunseriC．Electrochim．Acta,1993,38:12MorrisonSR．ElectrochemistryatSemiconductorandOxidizedMetalElectrodes,Plenum,NewYork,19803LenhartSJ,MacDonaldDD．J．Electrochem．Soc,1988,135:10634周国定,张国庆,童汝亭．物理化学学报,1992,8(3):418 |
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