介电常数分别为2.6的聚甲基丙烯酸甲酯（PMMA）及介电常数为16的偏氟乙烯-三氟乙烯共聚物（P（VDF-TrFE））两种不同的有机绝缘材料,通过溶液旋涂的方法在P型硅衬底上制备了不同结构的复合栅介质膜并测试了它们的高频C-V特性及漏电特性。实验结果表明Si-PMMA-P（VDF-TrFE）-Ag结构绝缘膜上单位面积电容达到了35nF/cm2,40V电压下漏电流随着扫描次数的增加逐渐由7.29×10-7 A/cm2降低至3.44×10-7 A/cm2。而Si-P（VDF-TrFE）-PM-MA-Ag结构栅介质膜测得的单位面积电容仅为15nF/cm2,在相同电压下的单位面积漏电流为1.93×10-8 A/cm2。在此基础上分析了电子陷阱以及电场强度对双层栅绝缘膜C-V、I-V特性的影响。
Based on solution processing,use two kinds of materials which have different dielectric constant,2.6 for PMMA and 16 for P（VDF-TrFE）.Fabricate two different structures of double-layer insulating films on P type silicon substrates and test their high frequency C-V characteristic and leakage characteristics.For Si-PMMA-P（VDF-TrFE）-Ag structure,the capacitance per unit is 35nF/cm2 and leakage current under 40V decrease gradually from 7.29×10-7A/cm2 to 3.44×10-7A/cm2 with the number of scans increase.When comes to the Si-P（VDF-TrFE）-PMMA-Ag structure,the capacitance measured is only 15nF/cm2,and the leakage current is 1.93×10-8A/cm2 at the same voltage.Based on this we analysis the influence of electron traps and electric field strength for the C-V and I-V characteristics in double layer insulating films.
参考文献
| [1] | Nomoto K et al.[J].Electron Devices,2005,52:1519-1526. |
| [2] | 刘向,刘惠,姚远.并五苯有机薄膜晶体管电学性能研究[J].固体电子学研究与进展,2009(02):183-186. |
| [3] | Ismail L N.Electrical Properties of Spin Coated PMMA for OFETs Applications[A].Malaysia,2011:333-338. |
| [4] | Zhu Guodong;Luo Xiaoya;Zhang Jihao.The Role of Space Changes on Polarization Fatigue in Freeoelectric P(VDF-TrFE) Copolymer Firms[M].Tokyo:Electrets,2008 |
| [5] | C.stro R M;Andrade M C;Faria L O.[J].Electrets,2005(06):312-315. |
| [6] | 刘恩科.半导体物理学[M].北京:电子工业出版社,2003:245-268. |
| [7] | 吴世康;汪鹏飞.有机电子学概论[M].北京:化学工业出版社,2010:117-134. |
| [8] | Hitchcock R D .[J].Proceedings of the IEEE,2009,56:335-336. |
| [9] | Mizutani T.Behavior of Charge Carriers in Organic Insulating Materials[A].America,2006:1-10. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%