梯度α-Ta(N)/TaN双层阻挡层的制备及性能表征

稀有金属材料与工程, 2012, 41(10): 1855-1858.

梯度α-Ta(N)/TaN双层阻挡层的制备及性能表征

刘春海 ^1, , 罗宏 ^2, , 金永中 ^3, , 宋忠孝 ^4, , 陈顺礼 ^5, , 汪渊 ^6, , 安竹 ^7, , 刘明 ^8,

1.四川大学教育部辐射物理及技术重点实验室,四川成都610064;四川理工学院材料腐蚀与防护四川省重点实验室,四川自贡643000

2.四川理工学院材料腐蚀与防护四川省重点实验室,四川自贡643000

3.四川理工学院材料腐蚀与防护四川省重点实验室,四川自贡643000

4.西安交通大学金属材料强度国家重点实验室,陕西西安710049

5.四川大学教育部辐射物理及技术重点实验室,四川成都610064

6.四川大学教育部辐射物理及技术重点实验室,四川成都610064

7.四川大学教育部辐射物理及技术重点实验室,四川成都610064

8.四川大学分析测试中心,四川成都610064

基金项目: 教育部新世纪人才基金(NCET-08-0380) 金属材料强度国家重点实验室开放基金(201011006) 国家自然科学基金(50771069;50871083) 四川省科技支撑计划基金(2008FZ0002)

关键词：扩散阻挡层 , 电阻率 , 热稳定性 , 微结构

Preparation and Properties Characterization of Gradient α-Ta(N)/TaN Bi-layer Diffusion Barrier

提出了一种梯度氮化法制备出低阻、高稳定性的a-Ta(N)/TaN双层Cu扩散阻挡层.该方法有效地避免了异质元素的引入和高N含量导致的高电阻率.用四点探针(FPP)、X射线衍射(XRD)、高分辨透射电子显微镜(HRTEM)进行薄膜电性能和结构的表征.分析结果表明,梯度氮化工艺能调控金属Ta膜的相结构和金属Ta中的N原子浓度,从而获得低阻a-Ta(N)/TaN双层Cu扩散阻挡层结构.600℃高温老化退火的实验结果进一步证明此结构具有高的热稳定性.

参考文献

[1]	Yang LY;Zhang DH;Li CY;Foo PD .Comparative study of Ta, TaN and Ta/TaN bi-layer barriers for Cu-ultra low-k porous polymer integration[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(0):176-181.
[2]	Zhou M;Zhao Y;Huang W et al.[J].Microelectronic Engineering,2008,85:2028.
[3]	Xie Q;Qu XP;Tan JJ;Jiang YL;Zhou M;Chen T;Ru GP .Superior thermal stability of Ta/TaN bi-layer structure for copper metallization[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(3):1666-1672.
[4]	Bae JW;Lim JW;Mimura K;Isshiki M .Ion beam deposition of alpha-Ta films by nitrogen addition and improvement of diffusion barrier property[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2007(11):4768-4773.
[5]	Stavrev M;Fischer D;Preuss A et al.[J].Microelectronic Engineering,1997,33:269.
[6]	Rossnagel SM. .Characteristics of ultrathin Ta and TaN films[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2002(6):2328-2336.
[7]	Saha R;Barnard J A .[J].Journal of Crystal Growth,1997,174:495.
[8]	Kwon K W;Lee H J;Sinclair R .[J].Applied Physics Letters,1999,75:935.
[9]	Lee H J;Kwon K W;Ryu C et al.[J].Acta Materialia,1998,47:3965.
[10]	TWGs .International Technology Roadmap for Semiconductors (ITRS)[R].Contacts,2010.
[11]	Liu L.;Gong H.;Wang Y. .Annealing effects of tantalum films on Si and SiO2/Si substrates in various vacuums[J].Journal of Applied Physics,2001(1):416-420.
[12]	Knepper R;Stevens B;Baker S P .[J].Journal of Applied Physics,2006,100:123508.
[13]	Zhou YM;Xie Z;Xiao HN;Hu PF;He J .Effects of deposition parameters on tantalum films deposited by direct current magnetron sputtering[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2008(2):286-291.
[14]	Yoon DS.;Kang BS.;Lee SM.;Baik HK. .EFFECT OF INTERPOSED CR LAYER ON THE THERMAL STABILITY OF CU/TA/SI STRUCTURE[J].Journal of Applied Physics,1996(11):6550-6552.
[15]	Wang Y S;Hung C C;Lee W H et al.[J].Thin Solid Films,2008,516:5241.
[16]	Chen GS.;Huang SC.;Lee HY.;Chen ST. .Growth mechanism of sputter deposited Ta and Ta-N thin films induced by an underlying titanium layer and varying nitrogen flow rates[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(0):353-357.
[17]	Tsao JC;Liu CP;Wang YL;Wang YS;Chen KW .Controlling Ta phase in Ta/TaN bilayer by surface pre-treatment on TaN[J].The journal of physics and chemistry of solids,2008(2/3):501-504.
[18]	Tsao JC;Liu CP;Wang YL;Chen KW;Lo KY .Mechanism of over-etching defects during Ta/TaN barrier resputtering in micro-trench for Cu metallization[J].The journal of physics and chemistry of solids,2008(2/3):561-565.
[19]	Yang W L;Wu W F;Liu D G et al.[J].Solid-State Electronics,2001,45:149.
[20]	Chen G S;Chen S T .[J].Journal of Applied Physics,2000,87:8473.
[21]	Zhou J C;Li Y Z;Huang D H .[J].Journal of Materials Processing Technology,2009,209(02):774.
[22]	Wang Y;Zhu C C;Song Z X et al.[J].Microelectronic Engineering,2004,71(01):69.
[23]	Collobert D;Chouan Y .[J].Thin Solid Films,1978,55:L15.
[24]	Jiang A Q;Tyson T A;A xe L .[J].J Phys-Condes Matter,2005,17(39):6111.
[25]	Lee H J;Kwon K W;Ryu C et al.[J].Acta Materialia,1999,47(15-16):3965.
[26]	Oku T.;Uekubo M.;Takahiro K.;Yamaguchi S.;Murakami M.;Kawakami E. .DIFFUSION BARRIER PROPERTY OF TAN BETWEEN SI AND CU[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1996(4):265-272.

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