采用磁控溅射法,在衬底温度为620℃时,通过引入合适的衬底负偏压(100～200V),获得了结晶良好的Ta2O5薄膜,衬底负偏压增强了正离子对衬底表面的轰击作用,加速了其在衬底表面的松弛扩散效应,从而降低了Ta2O5薄膜的晶化温度,改善了其结晶性。同时,C—V测试结果表明:衬底负偏压进一步改善了Ta2O5薄膜的介电性能.
At the substrate temperature of 620℃, crystalline Ta2O5 films were sputtered by introducing suitable negative substrate bias of 100～200V.
It was thought that the ion bombardment to the substrate was enhanced with introducing the negative substrate bias. The diffusion and looseness of
deposited particles on the surface of substrate were accelerated. Consequently, the crystallization of Ta2O5 films was improved and
the crystallization temperature was lowered. Meanwhile, the C-V result indicated that the dielectric properties of Ta2O5 films were further
improved by introducing negative substrate bias.
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