采用以硅衬底为硅源的简单方法,在蘸有一层催化剂(0.05 M FeCl2·6H2O)薄膜的硅基片上直接制备了大量的单晶Si纳米线.用扫描电子显微镜(SEM)、透射电子显微镜(TEM)分别观察了硅纳米线的形貌及单根Si纳米线的显微结构.试验结果表明:随着温度的升高,纳米线的直径增大;催化剂是Si纳米线生成的重要因素,没有沉积催化剂的硅基片上不会有硅纳米线的生成,且该硅纳米线的生长机理为典型的气-液-固模式.
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