采用金属有机分解法(MOD)在(111)Pt／Ti／SiO2／Si衬底上制备了含(117)成分的 c轴择优取向和a轴择优取向的Bi3.25Nd0.75Ti3O12(BNT)薄膜.实验发现, BNT薄膜的晶 型结构主要依赖于预退火条件.电学性能测试表明,a轴择优取向的BNT薄膜具有高的剩余 极化和矫顽场,较高的介电常数和介电损耗,以及较大的电容调谐率;而c轴择优取向的则相 反. BNT薄膜具有同Bi4Ti3O12(BIT)薄膜相似的铁电各向异性行为.
The c-axis and a-axis preferential-oriented Bi3.25Nd0.75Ti3O12 (BNT) thin films together with (117)-orientation were deposited on (111)Pt/Ti/SiO2/Si substrates by a metalorganic decomposition (MOD) method. The results show that the crystallinity of BNT thin films mainly depends on the pre-annealing conditions. BNT thin films with a-axis preferential orientation show high remnant polarization, high coercive field, high dielectric constant, high dissipation factor, and large capacitance tuning, while those with c-axis preferential orientation are on the contrary. The anisotropic ferroelectric properties of BNT thin films are similar to those of Bi4Ti3O12 (BIT).
参考文献
| [1] | Meng X J, Sun J L, Wang X G, et al. Appl. Phys. Lett., 2002, 81 (21): 4035--4037. [2] Sun J L, Chen J, Meng X J, et al. Appl. Phys. Lett., 2002, 80 (19): 3584--3586. [3] 胡志高, 王根水, 黄志明等. 红外与毫米波学报, 2002, 21 (3): 175--179. [4] Lee H N, Hesse D. Appl. Phys. Lett., 2002, 80 (6): 1040--1042. [5] Chon U, Jang H M, Kim M G, et al. Phys. Rew. Lett., 2002, 89 (8): 0876011--0876014. [6] Park B H, Kang B S, Bu S D, et al. Nature, 1999, 401: 682--684. [7] Hayashi T, Iizawa N, Togawa D, et al. Jpn. J. Appl. Phys., 2003, 42: 1660--1664. [8] Kojima T, Sakai T, Watanabe T, et al. Appl. Phys. Lett., 2002, 80 (15): 2746--2748. [9] Cummins S E, Cross L E. J. Appl. Phys., 1968, 39 (5): 2268--2274. [10] Nogughi Y, Miwa I, Goshima Y, et al. Jpn. J. Appl. Phys., 2000, 39: L1259--L1262. [11] Wang G S, Cheng J G, Meng X J, et al. Appl. Phys. Lett., 2001, 78 (26): 4172--4174. [12] Ryu S O, Lee W J, Lee N Y, et al. Jpn. J. Appl. Phys., 2003, 42: 1665--1669. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%