采用514.5石nm波长的氩离子激光器,结合X射线衍射分析（XRD）、红外光谱分析（IR）、扫描电镜分析（SEM）和透射光谱分析,研究了GeS2非晶半导体薄膜在激光辐照后的性能及结构变化.实验结果发现,经热处理和激光辐照后,薄膜的光学吸收边均移向短波长处,并且随着辐照激光强度和辐照时间的增加而增加,这种平移在退火薄膜中是可逆的.SEM结果分析表明,薄膜在激光辐照后有晶相出现,且随着辐照激光强度的增加,晶相更多.
The changes of properties and structure in GeS2 amorphous semiconductor films by light illumination from Ar ion laser were studied with the XRD, IR, SEM and
transmission spectra analysises. Photoinduced crystallization was also observed in the exposed films. The results show that the optical absorption edges of the
films shift to shorter wavelength according to annealing and light illumination. The magnitude of shift increases with the increase of the intensity of illumination
light and the illumination time, and the shift in annealed films is reversible.
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