在泡生法蓝宝石单晶生长中,单晶炉内的热场对晶体质量至关重要.本文首先对单晶炉的顶部热屏、环形加热器和炉底保温进行了改进,然后结合计算机数值模拟,对热场改进前、后晶体的轴向和径向温度梯度、晶体表面温度分布、加热器功率等进行分析对比.结果表明:改进后的倾斜热屏增强了单晶炉内的辐射传热,对已生长出的晶体起到了后热作用,降低了晶体内的热应力;对加热器和底部钼保温层的改进,减小了加热器与坩埚间的热阻,增强了炉内的保温作用,使加热功率降低了约8%.
参考文献
[1] | 许承海,孟松鹤,韩杰才,左洪波,张明福.环境参数对GOI法蓝宝石晶体生长影响分析[J].哈尔滨工业大学学报,2006(07):1020-1024,1037. |
[2] | 许承海,杜善义,张明福,孟松鹤,左洪波,谭舒平,G.Benik.加热功率波动对SAPMAC法生长蓝宝石晶体的影响[J].人工晶体学报,2007(02):267-271. |
[3] | Cockayne B;Chesswas M;Gasson D B .Single Crystal Growth of Sapphire[J].Journal of Materials Science,1967,2:7-11. |
[4] | STR Group .CGSim 9.3[OL].http://www.semitech.us,2009-7-17. |
[5] | Demina, SE;Bystrova, EN;Postoov, VS;Eskov, EV;Nikolenko, MV;Marshanin, DA;Yuferev, VS;Kalaev, VV .Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method[J].Journal of Crystal Growth,2008(7/9):1443-1447. |
[6] | S.E. Demina;E.N. Bystrova;M.A. Lukanina;V.M. Mamedov;V.S. Yuferev;E.V. Eskov;M.V. Nikolenko;V.S. Postolov;V.V. Kalaev .Numerical analysis of sapphire crystal growth by the Kyropoulos technique[J].Optical materials,2007(1):62-65. |
[7] | O. Budenkova;M. Vasiliev;V. Yuferev;V. Kalaev .Effect of internal radiation on the solid–liquid interface shape in low and high thermal gradient Czochralski oxide growth[J].Journal of Crystal Growth,2007(1):156-160. |
[8] | Smirnova OV;Durnev NV;Shandrakova KE;Mizitov EL;Soklakov VD .Optimization of furnace design and growth parameters for Si Cz growth, using numerical simulation[J].Journal of Crystal Growth,2008(7/9):2185-2191. |
[9] | STR Group .CGSim Material Data Base,v.9.3[OL].http://www.semitech,2009-7-17. |
[10] | 许承海,杜善义,孟松鹤,左洪波,张明福.加热温度对GOI法生长蓝宝石晶体影响的数值模拟[J].硅酸盐通报,2006(04):184-189,211. |
[11] | 刘书强,杨志刚,李尚升.温度场对白宝石晶体生长质量的影响[J].超硬材料工程,2008(01):55-57. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%