1. 通过控制制备工艺条件和充电参数，利用相应条件下样品的等温表面电位衰减，开路热刺激放电电流谱等，考察了利用溶胶－凝胶（ｓｏｌ－ｇｅｌ）方法制备的Ｓｉ基多孔ＳｉＯ２薄膜的驻极体性能，分析了各种工艺参数与薄膜驻极体性质之间的联系，同时利用Ｇａｕｓｓ拟合及初始上升法对薄膜驻极体的电有陷阱深度进行了估算．实验结果表明，反应物中水的含量对薄膜驻极体的陷阱分布具有调节作用；估算出负电晕充电ＳｉＯ２薄膜驻极体电荷的活化能为０．３ｅＶ和１．０ｅＶ；环境湿度对电荷储存稳定性有一定的影响，降低栅压可以提高ＳｉＯ２薄膜驻极体的电荷储存稳定性．
By controlling the process of sol-gel and parameters of charging, the charge storage stability of porous silica thin film electret based on silicon substrate
was investigated by measuring isothermal surface potential decay and current spectra of open-circuit Thermally Stimulated Discharge (TSD). The relationships
between these parameters were analyzed. Moreover, the energies of charge traps were evaluated by the initial-rise method after Gauss fitting. The result shows that
the content of water in the solution of reactant has some influences on the charge traps distribution of sol-gel silica thin film. The evaluated activation energies
of charge traps in sol-gel SiO2 film electret are 0.3eV and 1.0eV, respectively. The influence of relative humidity on the charge storage stability of SiO2 film
electret was investigated. Decreasing the grid voltage during corona charging is another method to improve the charge storage stability for SiO2 film electret.
参考文献
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