采用垂直Bridgroan法制备出了x=0.2的Cd1-xMnxTe晶体(Cd0.8Mn0.2 Te).利用MPMS-7(magnetic property measurement system)型超导量子磁强计测量了Cd0.8Mn0.2Te晶体的磁化强度(M)与磁场强度(H)和温度(T)的关系,磁场强度范围为-1592～1592kA/m,温度范围为2～200K.Cd0.8Mn0.2Te晶体的法拉第效应测试在300K温度下进行,磁场强度<0.2T.2K温度下的M-H曲线表明,晶体的Mn2+离子之间存在反铁磁相互作用.796A/m恒磁场下的磁化率γ与温度T的关系研究表明,晶体在2～200K之间是顺磁态,当T>40K时,y与T满足居里-外斯定律;T<40K,γ与T的关系偏离居里-外斯定律,表现出顺磁增强现象.法拉第效应研究表明,晶体的Verdet常数的绝对值达到2×103deg/cm·T,采用单振子模型能够很好地拟合实验数据,得出晶体的激子能量Eo=1.831eV,说明sp-d交换相互作用引起的激子跃迁对晶体的巨法拉第效应起到主要作用.
参考文献
| [1] | L. A. Kosyachenko;A. V. Markov;E. L. Maslyanchuk;I. M. Rarenko;V. M. Sklyarchuk .Specific Features of Conductivity of Cd_(1-x)Zn_xTe and Cd_(1-x)Mn_xTe Single Crystals[J].Semiconductors,2003(12):1373-1379. |
| [2] | Triboulet R .[J].Physica Status Solidi C,2005,2(05):1556-1565. |
| [3] | Petrou A;Peterson D L;Venugopalan S et al.[J].Physical Review Letters,1982,48:1036-1039. |
| [4] | Gaj J A;Planel R;Fishman G .[J].Solid State Communications,1979,29(05):435-438. |
| [5] | Shapira Y;Oliveira N F;Becla P et al.[J].Physical Review B,1990,41:5931-5941. |
| [6] | 陈辰嘉;王学忠;刘继周 等.[J].北京大学学报（自然科学版）,1992,28(01):101-105. |
| [7] | Jiménez-González H J;Aggarwal R L;Becla P .[J].Physical Review B,1992,45(24):14011-14018. |
| [8] | Wu A Y;Sladek R J .[J].Journal of Applied Physics,1982,53(12):8589-8592. |
| [9] | Mycielski A;Burger A;Sowinska M et al.[J].Physica Status Solidi C,2005,2:1578-1585. |
| [10] | Parkin J;Sellin PJ;Davies AW;Lohstroh A;Ozsan ME;Seller P .alpha Particle response of undoped CdMnTe[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,2007(1/2):220-223. |
| [11] | Jijun Zhang;Wanqi Jie;Tao Wang;Dongmei Zeng;Yunxiao Hao;Ke He .Vertical Bridgman growth and characterization of CdMnTe substrates for HgCdTe epitaxy[J].Journal of Crystal Growth,2008(13):3203-3207. |
| [12] | Luan, LJ;Jie, WQ;Mang, JJ;Li, PS .Faraday rotation in indium doped Cd1-xMnxTe single crystals[J].Solid State Communications,2009(9/10):357-360. |
| [13] | 曾冬梅,王涛,查钢强,张继军,介万奇.CdZnTe晶体缺陷的透射电子显微分析[C].第六届中国功能材料及其应用学术会议论文集,2007:3967-3969. |
| [14] | 刘宜华,张连生.稀释磁性半导体[J].物理学进展,1994(01):82. |
| [15] | Galazka R R;Nagata S;Keesom P H .[J].Physical Review B,1980,22:3344-3355. |
| [16] | Bartholomew D U;Furdyna J K;Ramdas A K .[J].Physical Review B,1986,34:6943-6950. |
| [17] | Eurdyna J K .[J].Journal of Applied Physics,1988,64(04):R29-R64. |
| [18] | BuherMA .[J].Solid State Communications,1987,62(01):45-47. |
| [19] | Eunsoon O;Bartholmew D U;Ramdas A K et al.[J].Physical Review B,1988,38:13183-13190. |
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