采用脉冲激光烧蚀高纯YSi2靶,在n型Si(100)单晶村底上制备YSi2纳米颗粒.原子力显微镜(AFM)观察样品表面颗粒尺寸约40～50 nm.X射线光电子能谱(XPS)测试结果表明,YSi2纳米颗粒成分为Y-O-Si.室温下对样品的光致发光(PL)性能进行测试,在500 nm处有一个较大的宽峰,409 nm附近出现强度较弱的发光峰.前者与样品中Y-O-Si电荷迁移带有关,后者为衬底表面纳米尺寸SiOx复合中心离子发光.室温下,对原位制备的薄膜电学(I-V/C-V)性能进行测试,结果表明薄膜的介电常数约为13.6.
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