采用电泳沉积法在石墨基体上制备厚度可控的Si涂层,考察了电泳沉积参数(电压、沉积时间、固含量及添加剂量)对涂层沉积量的影响.所制备的Si涂层通过烧结与石墨基体发生在位反应形成SiC涂层.用SEM观察涂层烧结前后的形貌,发现烧结后Si渗入基体内部.孔径分布数据表明所形成的SiC涂层导致石墨孔径变小.实验提供了一种制备SiC涂层的新方法,电泳沉积一烧结可用于C/SiC复合材料的制备.
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