ZnO是一种新型的I-Ⅵ族半导体材料,目前已研究开发了许多ZnO薄膜的生长技术.其中,磁控溅射、喷雾热分解、分子束外延、激光脉冲沉积、金属有机物化学气相外延等沉积技术得到了有效应用;而一些新的工艺方法,如溶胶-凝胶、原子层处延、化学浴沉积、离子吸附成膜、离子束辅助沉积、薄膜氧化等也进行了深入研究.详细阐述了ZnO薄膜生长技术的最新研究进展.
参考文献
[1] | 李剑光,叶志镇,赵炳辉,袁骏.硅基上直流反应磁控溅射沉积优质ZnO薄膜及其性能研究[J].半导体学报,1996(11):877. |
[2] | 裴志亮,谭明晖,杜昊,陈猛,孙超,黄荣芳,闻立时.ZnO:Al薄膜的组织结构与性能[J].材料研究学报,2000(05):538-542. |
[3] | Kim K K et al.[J].Journal of Applied Physics,2000,87(07):3573. |
[4] | Takai O et al.[J].Thin Solid Films,1998,318:l17. |
[5] | Futsuhara M et al.[J].Thin Solid Films,1998,317:322. |
[6] | Minami T et al.[J].Thin Solid Films,2000,366:63. |
[7] | Nunes P et al.[J].Thin Solid Films,2001,383:277. |
[8] | Paraguay D F et al.[J].Thin Solid Films,2000,373:137. |
[9] | Ma T Y et al.[J].Japanese Journal of Applied Physics,1996,35(12):6208. |
[10] | Ohkubo I.;Ohtomo A.;Ohnishi T.;Tsukazaki A.;Lippmaa M. Koinuma H.;Kawasaki M.;Matsumoto Y. .Investigation of ZnO/sapphire interface and formation of ZnO nanocrystalline by laser MBE[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2000(0):514-519. |
[11] | Bagnall DM;Chen YF;Zhu Z;Yao T;Koyama S;Shen MY;Goto T .Optically pumped lasing of ZnO at room temperature[J].Applied physics letters,1997(17):2230-2232. |
[12] | Zu P.;Wong GKL.;Kawasaki M.;Ohtomo A.;Koinuma H.;Segawa Y.;Tang ZK. .ULTRAVIOLET SPONTANEOUS AND STIMULATED EMISSIONS FROM ZNO MICROCRYSTALLITE THIN FILMS AT ROOM TEMPERATURE[J].Solid State Communications,1997(8):459-463. |
[13] | Bagnall DM.;Zhu Z.;Yao T.;Shen MY.;Goto T.;Chen YF. .High temperature excitonic stimulated emission from ZnO epitaxial layers[J].Applied physics letters,1998(8):1038-1040. |
[14] | Makino T.;Segawa Y.;Chia CH.;Yasuda T.;Kawasaki M.;Ohtomo A.;Tamura K.;Koinuma H.;Isoya G. .Optical spectra in ZnO thin films on lattice-matched substrates grown with laser-MBE method[J].Journal of Crystal Growth,2000(0):289-293. |
[15] | Joseph M et al.[J].Physical Review B,2001,302-303:140. |
[16] | Joseph M et al.[J].Japanese Journal of Applied Physics Part 1,1999,38:1205. |
[17] | Ryu YR.;Look DC.;Wrobel JM.;Jeong HM.;White HW.;Zhu S. .Synthesis of p-type ZnO films[J].Journal of Crystal Growth,2000(1/4):330-334. |
[18] | Verardi P.;Andrei A.;Dinescu M. .CHARACTERIZATION OF ZNO THIN FILMS DEPOSITED BY LASER ABLATION IN REACTIVE ATMOSPHERE[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1996(0):827-830. |
[19] | Hu J H et al.[J].Journal of Applied Physics,1992,71(02):880. |
[20] | Sub S et al.[J].Journal of Materials Science Letters,1999,18:789. |
[21] | Yoshida A et al.[J].Journal of Electron Spectroscopy and Related Phenomena,1996,80:97. |
[22] | Xu X L et al.[J].Journal of Crystal Growth,2001,223:201. |
[23] | Yousfi E B et al.[J].Thin Solid Films,2001,387:29. |
[24] | Jiménez-González A E et al.[J].Journal of Crystal Growth,1998,192:430. |
[25] | Tan G I et al.[J].Journal of Materials Science and Technology,1997,13:302. |
[26] | Lee C et al.[J].Solar Energy Materials and Solar Cells,1996,43:37. |
[27] | Bao G W;Li S F Y .[J].Talanta,1998,45:751. |
[28] | Borgohain K.;Mahamuni S. .Luminescence behaviour of chemically grown ZnO quantum dots[J].Semiconductor Science and Technology,1998(10):1154-1157. |
[29] | Lindroos S et al.[J].International Journal of Inorganic Materials,2000,2:197. |
[30] | Li W.;Zhang FM.;Wang X.;Liu XH.;Zou SC.;Zhu YK.;Li Q.;Xu JF.;Mao DS. .Characteristics of ZnO : Zn phosphor thin films by post-deposition annealing[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2000(0):59-63. |
[31] | Cho S et al.[J].Applied Physics Letters,1999,75(18):2761. |
[32] | Miyake A et al.[J].Japanese Journal of Applied Physics,2000,39:L1186. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%