ZnGeAs2是黄铜矿结构的三元化合物半导体材料,在红外非线性光学方面有重要应用前景.本文探讨了ZnGeAs2多晶的形成途径和合成机理,报道了一种ZnGeAs2多晶合成方法.以高纯(6N)Zn、Ge、As单质为原料,按化学计量比,富Zn1‰和As2‰配料,采用双温区合成方法,辅以机械、温度振荡和梯度降温的合成工艺,合成出均匀致密的单相ZnGeAs2多晶.经XRD和EDS分析表明:合成产物为黄铜矿结构的单相ZnGeAs2多晶,晶胞常数为a=b=0.56745 nm,c=1.11580 nm,与标准PDF卡片(No.730397)一致;各组成元素的原子比Zn∶Ge∶AS=1.00∶0.98∶1.95,接近理想化学计量比.上述分析结果表明,合成产物可用于ZnGeAs2单晶生长,为进一步研究ZnGeAs2晶体的非线性光学性能和应用奠定了较好的基础.
Ternary chalcopyrite semiconductor ZnGeAs2 is a nonlinear optical material, which is expected to have important applications in laser frequency conversion.In this paper, the formation and synthesis mechanism of ZnGeAs2 polycrystal were discussed, and a method of ZnGeAs2 polycrystal synthesis was reported.High-purity (6N) Zn, Ge and As, were weighed as raw materials according to the stoichiometry with the excess of 1‰ Zn and 2‰ As.A single-phase ZnGeAs2 polycrystalline ingot was successfully synthesized, using two-temperature zone synthesis method, combining with mechanical oscillation, temperature oscillation and gradient cooling techniques.The X-ray diffraction (XRD) and Energy Dispersive Spectrometer (EDS) results show that the lattice constants of the synthesized products are a=b=0.56745 nm, c=1.11580 nm, which are consistent with the standard PDF card (No.730397).The atomic ratio of the elements is Zn∶Ge∶As=1.00∶0.98∶1.95, which is close to the ideal stoichiometric ratio.The results demonstrate that the synthesized products can be used for the growth of ZnGeAs2 single crystals, and lay a good foundation for further study of nonlinear optical properties and applications on ZnGeAs2 crystals.
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