High-resolution transmission electron microscopy images of stacking faults on (001) and (<(1)over bar 01>) planes in a beta-Si3N4 whisker were obtained and compared to image simulations. This procedure showed that the atomic structure of the four atomic planes around the (001) stacking fault plane in the beta-phase is very similar to that of the unit cell of alpha-Si3N4 crystal. The stacking fault was observed to climb under electron irradiation in the microscope.
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