制备了不同氧分压比的AgOx薄膜,对其进行了原子力(AFM)形貌观察,发现分压比0.4时,薄膜的粗糙度最小,均匀性也最好.光谱性质表明:随着分压比的增加,存在着金属向半导体的转变;经过热处理后的共振吸收峰和扫描电(SEM)表明了金属银粒子的析出.不同激光功率下的烧蚀实验表明:在激光照射下存在着两记录(烧蚀)形态,一种是银粒子散布在其间的气泡型;另一种是形成中间烧蚀孔,银粒子在孔附近密集的破裂气泡型.
The surface topographies of silver oxide (AgOx) thin films prepared at different oxygen flow ratios have been studied by the atomic force morphology (AFM). Results have shown that the smallest roughness and the best film uniformity can be obtained at the oxygen ratio of 0.4. Their spectrum characteristics show that there may exit a transition from metal to semiconductor with the increasing of oxygen ratio. The surface plasmon resonance absorption and scanning electron microscopy (SEM) experiments indicate the emergence of Ag particles from AgOx film after it was annealed. Two different recording types can be produced under the different laser ablation. One is the bubble with Ag particles scattering in, the other is the rupture bubble with an ablated hole in the centre. Ag particles assembled around the hole.
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