掺铅的碘化铯（Pb：CsI）晶体在400℃空气中进行热处理可以在晶体中诱导产生发光中心，这些发光中心的激发谱与CS－Pb-I体系中一系列化合物的激子吸收谱相吻合．它们被认为是由该晶体在退火过程中所形成的CsPbI3、Cs4PbI6等聚集相产生的．测量了10～30K温度范围内分别在410nm和360nm波长激发下Ph：CsI的发射谱，观察到各发射谱的相对强度随退火时间而变化，这表明在400℃退火温度下晶体中各类Cs－Ph－I聚集相的形成和转化已十分活跃．
Luminescence centers were created in the CsI host crystals by annealing of Pb-doped crystals at 400℃ in air. It was found that the excitation spectra of these luminescence centers are coincided
well with the excitation absorption of a series of compounds in the Cs-Pb-I system, which indicates that they are attributed to the creation of CsPbI3, CsPbI6
and other aggregates in the annealing process. The emission spectra of Pb:CsI crystals were measured in the 10-30K temperature range by 360nm and 410nm excitation respectively.
The relative intensities of emission bands depend strongly on annealing time, which implies that the creation and transformation of various Pb-based aggregates in Pb:CsI
crystals tend to active around 400℃ annealing temperature.
参考文献
| [1] | Lecoq P, et al. Nucl.Instr.and Meth., 1995, A365: 291--297. [2] Nikl M, et al. Phys. Rev., 1995, B51: 5192--5199. [3] Henneberger F, Pusl J. In: Henneberger F, Schmitt-Rink, Gobel E, ed. Optics of Semiconductor Nanostructures. Berlin: Akademie Verlag, 1993. 447. [4] Flytzanis C, et al. Prog. Opt., 1991, 29: 323--326. [5] Nikl M, et al. Mat. Res. Symp. Proc., 1994, 348, 155--157. [6] Nitsch K, et al. J. Cryst. Growth, 1993, 131: 612--615. [7] Voloshinovskij A S, et al. Ukr.Fiz.Zh., 1987, 32: 685--687. [8] Nikl M, Nitsh K, et al. Submitted to J.Appl.Phys. [9] Babin V, Fabeni P, et al. Proc. of eurodim’98, Keele, July 1998, UK. [10] Nikl M. Invited talk of EXCON 98 Conference, Novemeber, 1998, Boston, USA. [11] Fabeni P, et al., Elechem.Soc.Proc., 1998, 97-29: 186--188. [12] Nikl M, et al. J.Lumin., 1997, 72-74: 377--379. [13] Zazubovich S, Int.J.Modern Physics, 1994, B8: 985990. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%