采用传统的固相反应法制备了CGO（Ce0．8Gd0．2O1．9）固体电解质，研究了CuO烧结助剂对CGO的体密度、相组成、微观结构及电性能的影响。结果表明，加入CuO的样品的体密度随烧结温度的升高而增大，1300℃烧结的样品致密化程度最高，当烧结温度为1350℃时，样品有过烧现象。与纯的CG0相比，CuO的加入使样品的烧结温度降低了将近300℃，而且经高温烧结后仍为立方萤石结构，无新相生成。CGO交流阻抗谱与电导率分析表明，当CuO的掺杂量为1%（摩尔分数），烧结温度为1300℃时电导率最高，所以CuO作为烧结助剂不仅降低了烧结温度，使晶粒尺寸减小，同时还提高了电导率，因而CuO是很好的烧结助剂。
Ce0.8Gd0.2O1.9 was prepared by traditional solid state reaction method. The effect of CuO additions on density, phase composition, microstructure and electrical properties of CGO were investigated by XRD, SEM and EIS. The results showed that the density of CGCO increased with temperature increasing and reached high- est at 1300℃, when the sintering temperature was 1350℃, CGCO seemed to be over sintered, the addition of CuO make the densification sintering temperature reduced by 300℃ compared with pure CGO which was sin- tered at 1600℃. XRD results indicated that CGCO was still remained cubic fluorite structure and no new phase forms. AC impedance spectroscopy and conductivity analysis showed that the conductivity of CGO-1.0CuO sin- tered at 1300℃ was highest. So CuO addition not only reduced the sintering temperature but also promoted the electrical conductivity. CuO was an effective sintering aids.
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