FeMB(M=Mn,Mo)非晶态合金的电阻率与温度(4.2

金属学报, 1984, 20(3): 270-276.

FeMB(M=Mn,Mo)非晶态合金的电阻率与温度(4.2—300K)的关系

中国科学院物理研究所

TEMPERATURE (4.2—300K) DEPENDENCE OF ELECTRICAL RESISTIVITY OF FeMB (M=Mn, Mo) AMORPHOUS ALLOYS

SHEN Baogen , ZHAN Wenshan , ZHANG Zhiying , WU Zonglin (Institute of Physics

本文研究了(Fe_(1-x)Mn_x)_(80)B_(20)(x=0—0.25)和(Fe_(1-x)Mo_x)_(80)B_(20)(x=0.05—0.18)非晶态合金的电阻率与温度(4.2—300K)的关系。结果表明,所有样品都显示出电阻率与温度关系的极小值。在TT_(mim)的温区,电阻率的T~2关系认为是电子-声子散射和局部自旋涨落散射的共同结果。

The electrical resistivity of (Fe_(1-x)Mn_x)_(80)B_(20) (x=0—0.25) and (Fe_(1-x)Mo_x)_(80)B_(20) (x=0.05—0.18) as a function of temperature between 4.2—300K has been studied. In all samples, the minima of the resistivity vs temperature are found. Below temperature T_(min) at which the resistivity is minmum, their resistivity can be described by a logarithmic temperature dependence and may originate from the Kondolike scattering. Over T_(min), it has a T~2 temperature dependences and may originate from both electron-phonon and localized spin-fluctuation scattering.

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