在5.0 GPa、1300-1800℃条件下不使用烧结助剂高压烧结制备了AlN陶瓷, 研究了烧结温度和烧结时间对AlN高压烧结体微观结构和残余应力的影响. 结果表明: 高压烧结制备AlN陶瓷能有效地降低烧结温度和缩短烧结时间, 在5.0 GPa /1400℃/50 min条件下AlN烧结体表现出穿晶断裂模式; 将烧结温度提高到1800℃在AlN陶瓷中形成了单相多晶等轴晶粒组织; 在5.0 GPa/1700℃/125 min条件下AlN陶瓷内部存在2.0GPa的残余压应力, 其原因是在高压烧结AlN陶瓷出现了晶格畸变
High-density AlN ceramics were prepared without sintering additives by high-pressure sintering at 5.0 GPa and differente temperatures. The characterization of the sintered bodies was determined by XRD, SEM and micro-Raman spectroscopy (MRS). Compared conventional liquid-phase sintering, the sintering temperature was effectively lowered and the sitering time was shortened under high pressure. Controlling fracture mode was intraguanular when the sintering temperature was as low as 1400 °C under 5.0 GPa. The microstructure of single-phase equiaxed polycrystal in AlN body materials formed at 1800°C and 5.0 GPa for 50 min. There are Residual compression stress in AlN bodies prepared by high-pressure and residual compression stress of the AlN ceramics sintered at 5.0 GPa and 1700 °C for 125 min is -2.0 GPa.
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