我们利用气态源分子束外延设备在不同In组分的InGaP或InAlP虚衬底上生长Ge薄膜,并比较不同虚衬底上Ge薄膜的材料性质.利用拉曼光谱方法测得生长在InGaP虚衬底上的Ge薄膜最大的张应变量可达1.8％,而生长在InAlP虚衬底上的最大张应变量可达2.0％.通过对表面Ge进行腐蚀并测试电阻的方法,我们发现Ge生长在InGaP上存在平行导电问题,而Ge生长在InAlP上则可以消除平行导电的影响.通过霍尔测试验证了Ge受到张应变时对电子迁移率的提高作用.
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