用质量比为1％∶0.2％(质量分数)的Sn、S混合粉末在玻璃衬底上热蒸发沉积SnS薄膜,氮气保护下对薄膜进行350℃、40min热处理后,得到简单正交晶系SnS多晶薄膜,薄膜的电阻率为103 Ω·cm,选择2％和4％(质量分数)的Zn掺杂来改善SnS薄膜的导电性.研究表明,SnS∶Zn薄膜最有效的热处理条件为300℃、40min,掺Zn后薄膜的物相结构转为简单正交和面心正交晶系混合相,SnS∶Zn薄膜(2％和4％(质量分数))的电阻率在1.8528 × 10-3～4.944×10-4 Ω·cm之间,导电类型为N型.薄膜中Sn和S分别呈+2和-2价,Zn显示+2价,以间隙和替位两种状态存在于SnS中,对薄膜导电性起改善作用的是间隙态的Zn离子.
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