Preparation and Thermoelectric Properties of Zr_(1-χ)Ti_χNiSn_(0.975)Sb

材料科学技术（英文）, 2009, 25(6): 738-741.

^1, , ^2, , ^3, , ^4, , ^5, , ^6, , ^7,

1.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

2.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

3.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

4.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

5.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

6.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

7.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

基金项目: the National Ba-sic Research Program of China(2007CB607502) The work was supported by the National High Tech-nology Research and Development Program of China("863 Program", 2007AA03Z234) the National Natural Science Foundation of China (No

Preparation and Thermoelectric Properties of Zr_(1-χ)Ti_χNiSn_(0.975)Sb_(0.025) Half-Heusler Alloys

Cui Yu ^1, , Yun Zhang ^2, , Tiejun Zhu ^3, , Guangyu Jiang ^4, , Ji Xu ^5, , Bo Zhao ^6, , Xinbing Zhao ^7,

1.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

2.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

3.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

4.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

5.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

6.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

7.State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Keywords： Thermoelectric materials

Zr_(1-χ)Ti_χNiSn_(0.975)Sb_(0.025) (χ=0, 0.15, 0.25, 0.5) half-Heusler thermoelectric materials have been prepared by levitation melt, melt spinning and hot pressing. X-ray diffraction analysis and scanning electron microscopy observation showed that nearly single phase half-Heusler compounds were obtained for the levitation-melted ingots. The effects of Ti substitution and grain refinement by melt spinning have been studied. It is found that both the Ti substitution on the Zr site and the grain refinement can reduce the lattice thermal conductivity and total thermal conductivity. The maximum figure of merit ZT value achieved is about 0.47, which is comparable with the previously reported value of ～0.5 for Zr_(0.5)Ti_(0.5)NiSn.

参考文献

[1]	Q. Shen;L. Chen;T. Goto;T. Hirai;J. Yang;G. P. Meisner;C. Uher .Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds[J].Applied physics letters,2001(25):4165-4167.
[2]	S. Bhattacharya;A. L. Pope;R. T. Littleton .Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn_(1-x)Sb_(x)[J].Applied physics letters,2000(16):2476-2478.
[3]	Takahiro Katayama;Sung Wng Kim;Yoshisato Kimura;Yoshinao Mishima .The effects of quaternary additions on thermoelectric properties of Tinisn-Based Half-Heusler Alloys[J].Journal of Electronic Materials,2003(11):1160-1165.

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Preparation and Thermoelectric Properties of Zr_(1-χ)Ti_χNiSn_(0.975)Sb_(0.025) Half-Heusler Alloys

参考文献