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采用传统降温法生长了掺杂不同浓度的SO42-离子KDP晶体,研究分析了晶体的宏观缺陷及开裂形式,从晶体生长角度初步分析了硫酸盐掺杂导致KDP晶体开裂的主要原因。实验表明,随着SO42-离子掺杂浓度的增大,KDP晶体的主要开裂形式是垂直于生长层{101}面的裂纹;晶体中裂纹存在的区域都分布有大量层层平行于生长层的母液包藏。随着SO42-离子掺杂浓度的进一步增大,晶体内包藏呈云雾状分布,裂纹不规则,晶体质量严重下降,透明度降低。

In this paper,KDP crystals were grown by the traditional temperature lowing method from the aqueous solution doped with different concentrations of SO2-4 ion.The macro defects and crack models have been analyzed in detail.The main reason that causing KDP crystal crack were analyzed from the view point of crystal growth.The experiment indicates that,the main crack model of KDP crystal is vertical to the growth layer of {101} face with the rise of the dopant concentration.The crystal sectors which have many cracks also have many mother liquor inclusions.With the doping concentration increase,the quality of KDP crystal decreased heavily.

参考文献

[1] 张建芹,王圣来,房昌水,孙洵,顾庆天,李毅平,王坤鹏,王波,李云南,刘冰.硫酸盐掺杂对KDP晶体生长的影响[J].功能材料,2005(10):1505-1508.
[2] de Vries SA.;Huisman WJ.;Zwanenburg MJ.;Feidenhans'l R. Bennett SL.;Smilgies DM.;Stierle A.;De Yoreo JJ.;van Enckevort WJP. Bennema P.;Vlieg E.;Goedtkindt P. .X-ray diffraction studies of potassium dihydrogen phosphate (KDP) crystal surfaces[J].Journal of Crystal Growth,1999(1/2):202-214.
[3] 张建军,朱世富,赵北君,张伟,刘敏文,李一春,陈宝军,刘娟,黎明.AgGaS2晶体生长裂纹研究[J].人工晶体学报,2005(01):52-55.
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