This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r.f. sputtering. Polycrystalline ZnO:Al films with good adherence to the substrates having a (002) preferred orientation have been obtained with resistivities in the range from 4.1 x 10(-3) to 5.3 x 10(-4) Ohm .cm, carrier densities more than 2.6 x 10(20) cm(-3) and Hall mobilities between 5.78 and 13.11 cm(2)/V/s for films. The average transmittance reaches 75% in the visible spectrum. The quality of obtained films depends on substrate temperature during film fabrication.
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