利用传统陶瓷工艺制备出BST(65/35)倒筒靶,采用射频溅射法沉积薄膜.开展了对Pt/Ti/SiO2/Si基底热处理工艺与BST同质缓冲层研究,总结出了可以确保基底界面性能良好、BST薄膜结构致密的工艺方法.介电性能测试表明:BST薄膜的介电常数约为60～70,介电损耗为1.5%～2.5%,居里温度为284K,介电温度系数(TCD)为0.5%.漏电流测试表明:在1MV/cm电场下,漏电流密度为1.9×10-6A/cm2.
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