用金属镁（Mg）作催化剂,氮气和铝块为反应物,采用直接氮化法制备出氮化铝（AlN）粉末样品。运用X射线衍射仪（XRD）、扫描电子显微镜（SEM）和拉曼光谱仪（Raman）对样品进行结构特性分析发现,AlN样品为纯六方相结构,呈现纳米线堆积形貌,纳米线直径约60nm,且尺寸均匀。拉曼散射光谱峰值较单晶AlN向低波数方向移动,表明此方法制备的AlN纳米线存在表面拉应力。
Aluminum nitride（AlN） nanowires were successfully synthesized by direct nitridization method.At 800℃,the reaction of nitrogen and aluminium lump occurred in ordinary equipments with magnesium powder as catalyst.The characterization of samples was done using XRD,SEM and Raman spectrograph.The results reveal the samples were pure hexagonal phase AlN of nanowires heaped structure with diameter about 60nm.The peaks of the Raman spectrum move towards low wavenumbers compared with monocrystal AlN,which demonstrates there is tensile stress in the materials.
参考文献
| [1] | Lyu SC.;Cha OH.;Suh EK.;Ruh H.;Lee HJ.;Lee CJ. .Catalytic synthesis and photoluminescence of gallium nitride nanowires[J].Chemical Physics Letters,2003(1/2):136-140. |
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