采用光辐射加热悬浮区熔法以3 mm/h的生长速度成功制备了Tb2PdSi3单晶.通过分析得知,该化合物为同成分熔融化合物,熔点约为1700℃.和其它R2PdSi3型化合物(R为稀土元素)不同,在单晶基体中没有发现TbSi沉淀,分析原因可能是因为晶体中Tb含量略高于化学计量比.采用X射线Laue背散射实验对晶体的晶格结构和高完整性进行了验证,并对定向单晶的a和c方向磁化率-温度曲线进行了测定.
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