磁控溅射制备Cu底层的实验研究

材料导报, 2007, 21(4): 138-143.

磁控溅射制备Cu底层的实验研究

张迪 ^1, , 程伟明 ^2, , 林更其 ^3, , 杨晓非 ^4,

1.华中科技大学电子科学与技术系,武汉,430074

2.华中科技大学电子科学与技术系,武汉,430074

3.华中科技大学电子科学与技术系,武汉,430074

4.华中科技大学电子科学与技术系,武汉,430074

基金项目: 国家自然科学基金(60490290) 国家自然科学基金(60571010)

关键词：射频磁控溅射 , SmCo5 , 垂直磁化膜 , Cu薄膜

Technology Study of Cu Underlayer Prepared by Magnetron-sputtering

使用射频磁控溅射方法在载玻片上制备Cu薄膜,并通过调整其溅射参数来改变Cu薄膜的内部结构.实验结果表明:当基的片加热温度为100～150℃、薄膜厚度为405 nm、溅射功率为150～300 W时,所制得的沿(111)面择优生长的Cu薄膜的Ⅰ(111)/Ⅰ(200)均大于15,可作为SmCo5垂直磁化薄膜的衬底层.

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材料期刊网

磁控溅射制备Cu底层的实验研究

Technology Study of Cu Underlayer Prepared by Magnetron-sputtering

参考文献