实验利用双放电腔微波-ECR等离子体源设备,采用复合PVD(physical vapor deposition)和PECVD(plasma enhanced chemical vapor deposition)的方法, 先后在NiTi基体上沉积Si和Si/α-C∶H过渡层,然后制备类金刚石薄膜.Raman光谱和透射电镜表明制备的梯度薄膜是典型的类金刚石薄膜,划痕的测试结果表明, Si过渡层沉积时间影响着梯度类金刚石薄膜与NiTi合金基体之间的结合强度,当沉积时间在60min左右时可获得具有最好结合强度的梯度薄膜,而超过或低于这个时间值会导致膜基结合强度降低.
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