通过等离子体与铜膜表面的分步反应合成了厚约4 nm的CuSiN自组装层。采用高分辨透射电镜(HRTEM)、纳米电子束探针(EDS)和 X射线衍射仪(XRD)表征CuSiN和Si/SiO2/TaN/Ta/Cu(CuSiN)/SiC:H/SiOC:H 多层膜基体系的微结构和热稳定性。结果表明：CuSiN层的引入显著提高Cu/SiC:H/SiOC:H结构的热稳定性，其机制是在500℃退火温度条件下CuSiN层能够稳定存在，从而阻碍了Cu原子向SiC:H/SiOC:H介质薄膜体内的扩散。
A CuSiN self-aligned layer with 4nm thickness was synthesized using RF-plasma-enhanced chemical vapor deposition system. The microstructure of Si/SiO2/TaN/Ta/Cu(CuSiN)/SiC:H/SiOC:H multi-layer stacks were investigated by using high-resolution transmission electron microscopy, energy-dispersive spectroscopy, and X-ray diffraction . The result indicates that the thermal stability of the interface of Cu/SiC:H dielectric barriers can be improved by introducing CuSiN self-aligned layer. This is attributed to its suppress copper or vacancy diffusion along the interface and into SiC:H/SiOC:H dielectric film.
参考文献
| [1] | |
| [2] | |
| [3] | |
| [4] |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%