确定了InN材料的带隙值并研究了影响InN材料带隙变化的导带电学结构和几个关键因素,以解释当前用不同方法生长不同质量的InN材料时出现的各种不同带隙值.用光致发光、光吸收和光调制反射方法测量确定InN材料的带隙值约为0.7eV;探讨了InN材料带隙与温度的函数关系,并分析了影响InN材料带隙的导带电学结构和有关因素.影响InN材料带隙的主要因素有Moss-Burstein效应、深能级俘获现象以及N:In化学计量比等,得出在不同质量样品和不同生长条件下,3种因素均影响InN材料的带隙值,但所起的作用却不尽相同.
参考文献
| [1] | Hovel H J;Cuomo J J .Electrical and optical properties of RF-sputtered CaN and InN[J].Applied Physics Letters,1972,20:71. |
| [2] | Tansley T L;Foley C P .Electron mobility in indium nitride[J].Electronics Letters,1984,20:1066. |
| [3] | Lebedev V;Cimalla V;Morales FM;Lozano JG;Gonzalez D;Mauder C;Ambacher O .Effect of island coalescence on structural and electrical properties of InN thin films[J].Journal of Crystal Growth,2007(1):50-56. |
| [4] | Lin J C;Su Y K;Chang S J et al.InN grown on GaN/sapphire templates at different temperatures by MOCVD[J].Optical Materials,2007,30:517. |
| [5] | Ran Junxue;Wang Xiaoliang;Hu Guoxin et al.Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD[J].Journal of Crystal Growth,2007,298:235. |
| [6] | Yoshimoto M;Yammamoto Y;Saraie J.Fabrication of InN/Si heterojunctions with rectifying characteristics[J].Phys Status Solid(c),2003(07):2794. |
| [7] | Starikov E;Shiktorov P;Gruzinakis V et al.Monte Carlo Calculations of the THz generation in wide gap semiconductors[J].Phys B-Condells Matter,2002,314(1-4):171. |
| [8] | Kim Taek-Seung;Kim Sang-Woo;Kim Han-Ki et al.Surface confinement of the InN-rich phase in thick InGaN on GaN[J].Superlattices and Microstructures,2006,40:545. |
| [9] | Anwar A F M;Wu S;Webster R T .Temperature dependent transport properties in GaN[J].IEEE Transactions on Electron Devices,2001,48(03):567. |
| [10] | Saitoh H;Utsumi W;Aoki K .Decomposition of InN at high pressures and temperatures and its thermal instability at ambient conditions[J].Journal of Crystal Growth,2008(2):473-476. |
| [11] | O'Leary SK.;Shur MS.;Bhapkar UV.;Eastman LF.;Foutz BE. .Electron transport in wurtzite indium nitride[J].Journal of Applied Physics,1998(2):826-829. |
| [12] | Leroux M;Gil B.Bandedge and optical functions of InN[A]//Gallium nitride and related semiconductors[M].London:INSPEC,1999:117. |
| [13] | Lei HP;Chen J;Petit S;Ruterana R;Jiang XY;Nouet G .Stillinger-Weber parameters for In and N atoms[J].Superlattices and microstructures,2006(4/6):464-469. |
| [14] | Hamberg I;Granqvist C G;Berrgren K F et al.Band-gap widening in heavily Sn-doped In2O3[J].Physical Review B:Condensed Matter,1984,30:3240. |
| [15] | Khoshman Jebreel L M;Kordesch Martin E .Optical absorption in amorphous InN thin films[J].Journal of Non-Crystalline Solids,2006,352:5572. |
| [16] | Wintrebert-Fouquet M;Butcher K S A;Guy I L et al.Piezoelectric coefficient of InN films prepared by radio-frequency sputtering[J].Thin Solid Films,2008,516:7267. |
| [17] | Himmerlich M;Krischok S;Lebedev V et al.Morphology and surface electronic structure of MBE grown InN[J].Journal of Crystal Growth,2007,306:6. |
| [18] | Fouquet M W;Butcher K S A;Motlan.High sensitivity,high resolution X-ray photoelectron analysis of InN[J].Phys Status Solid(c),2003(07):2785. |
| [19] | Vurqaftman I;Meyer J R;Mohan L R R .Band parameters for Ⅲ-Ⅴ compound semiconductors and their alloys[J].Journal of Applied Physics,2001,89(11):5815. |
| [20] | Specht P;Ho JC;Xu X;Armitage R;Weber ER;Erni E;Kisielowski C .Zincblende and wurtzite phases in InN epilayers and their respective band transitions[J].Journal of Crystal Growth,2006(2):225-229. |
| [21] | Wu J.;Walukiewicz W.;Shan W.;Yu KM.;Ager JW.;Haller EE.;Lu H. Schaff WJ. .Effects of the narrow band gap on the properties of InN - art. no. 201403[J].Physical review, B. Condensed matter and materials physics,2002(20):1403-0. |
| [22] | Kasic A.;Schubert M.;Saito Y.;Nanishi Y.;Wagner G. .Effective electron mass and phonon modes in n-type hexagonal InN - art. no. 115206[J].Physical Review.B.Condensed Matter,2002(11):5206-0. |
| [23] | Ji X H;Lau S P;Yang H Y et al.Structural and optical properties of wurtzite InN grown on Si(111)[J].Thin Solid Films,2007,515:4619. |
| [24] | Trainor J W;Rose K .Some properties of InN films prepared by reactive evaporation[J].Journal of Electronic Materials,1974,3(04):821. |
| [25] | K. Scott;A. Butcher;Marie Wintrebert-Fouquet;Patrick P.-T. Chen;Kathryn E. Prince;Heiko Timmers;Santosh K. Shrestha;Tatiana V. Shubina;Sergey V. Ivanov;Richard Wuhrer;Matthew R. Phillips;Bo Monemar .Non-stoichiometry and non-homogeneity in InN[J].Physica Status Solidi. C, Conferences and critical reviews,2005(7):2263-2266. |
| [26] | Shu GW;Lo MH;Yang MD;Hsu CL;Shen JL;Lan SM .Carrier localization in InN epilayers grown on Si substrates[J].Solid State Communications,2007(26):109-112. |
| [27] | Hasan M D Tanvir;Bhuiyan Ashraful G;Yamamoto Akio .Two dimensionsl electron gas in InN-based heterostructures:Effects of spontaneous and piezoelectric polarization[J].Solid-State Electronics,2008,52:134. |
| [28] | Zhang Z;Zhang R;Liu B;Xie ZL;Xiu XQ;Han R;Lu H;Zheng YD;Chen YH;Tang CG .Circular photogalvanic effect at inter-band excitation in InN[J].Solid State Communications,2008(4):159-162. |
| [29] | Briot O;Maleyre B;Ruffenach S;Gil B;Pinquier C;Demangeot F;Frandon J .Absorption and Raman scattering processes in InN films and dots[J].Journal of Crystal Growth,2004(1):22-28. |
| [30] | Stampel C;Van De Walle C G;Voggel D et al.Native defects and impurities in InN:First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudo-potentials[J].Physical Review B:Condensed Matter,2000,61(12):R7846. |
| [31] | S. M. Jeong;H. W. Shim;H. S. Yoon;M. G. Cheong;R. J. Choi;E.-K. Suh;H. J. Lee .Two different behavior patterns of photoluminescence depending on Mg doping rate in p-type GaN epilayers[J].Journal of Applied Physics,2002(12):9711-9715. |
| [32] | B. Arnaudov;T. Paskova;P. P. Paskov;B. Magnusson;E. Valcheva;B. Monemar;H. Lu;W. J. Schaff;H. Amano;I. Akasaki .Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels[J].Physical Review.B.Condensed Matter,2004(11):115216.1-115216.5. |
| [33] | Haddad D B;Dai H;Naik R et al.Excitation wavelength dependent raman scattering in low and highly degenerate InN films[J].Mater Res Soc Syrup Proceed,2004,798:Y12.7.1. |
| [34] | Yu KM;Liliental-Weber Z;Walukiewicz W;Shan W;Ager JW;Li SX;Jones RE;Haller EE;Lu H;Schaff WJ .On the crystalline structure, stoichiometry and band gap of InN thin films[J].Applied physics letters,2005(7):1910-1-1910-3-0. |
| [35] | Cimalla V;Foreter C;Kittler G.Correlation between strain,optical and electrical properties of InN grown by MBE[J].Phys Status Solid(c),2003(07):2818. |
| [36] | Alexander V.Soldatov;Alexander Guda;Antonina Kravtsova .Nitrogen defect levels in InN:XANES study[J].Radiation Physics and Chemistry,2006(11):1635-1637. |
| [37] | K. S. A. Butcher;M. Wintrebert-Fouquet;P. P.-T. Chen;T. L. Tansley;H. Dou;S. K. Shrestha;H. Timmers;M. Kuball;K. E. Prince;J. E. Bradby .Nitrogen-rich indium nitride[J].Journal of Applied Physics,2004(11):6124-6128. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%