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概述了国内外关于超级化学镀铜填充技术的最新研究成果,主要包括应用于半导体铜互连线工艺的化学镀铜和以次磷酸钠作还原剂的无甲醛化学镀铜.介绍了不同添加剂在超级化学镀铜填充中的作用机理以及存在的问题,并提出了今后的研究方向.

参考文献

[1] Zenglin Wang;Osamu Yaegashi;Hiroyuki Sakaue .Bottom-Up Fill for Submicrometer Copper Via Holes of ULSIs by Electroless Plating[J].Journal of the Electrochemical Society,2004(12):C781-C785.
[2] Shoso Shingubara;Zengling Wang;Osamu Yaegashi .Bottom-Up Fill of Copper in Deep Submicrometer Holes by Electroless Plating[J].Electrochemical and solid-state letters,2004(6):C78-C80.
[3] WANG Z L;YAEGASHI O;SAKAUE H et al.Efrect of additives on hole filling characteristics of electroless copper plating[J].Japanese Journal of Applied Physics,2004,43(10):7000-7001.
[4] Chang Hwa Lee;Sang Chul Lee;Jae Jeong Kim .Bottom-up filling in Cu electroless deposition using bis-(3-sulfopropyl)-disulfide (SPS)[J].Electrochimica Acta,2005(16/17):3563-3568.
[5] C. H. Lee;S. C. Lee;J. J. Kim .Improvement of Electrolessly Gap-Filled Cu Using 2,2'-Dipyridyl and Bis-(3-sulfopropyl)-disulfide (SPS)[J].Electrochemical and solid-state letters,2005(8):C110-C113.
[6] 王增林,王秀文,刘宗怀,杨祖培.超级化学镀铜沉积机理的研究[C].第十四次全国电化学会议论文汇编,2007:751-752.
[7] 王秀文 .超级化学镀铜溶液的电化学行为研究[D].西安:陕西师范大学,2007.
[8] SHINGUBARA S;WANG Z L .Formation and film characteristics of dual damascene interconnects by bottom-up electroless Cu plating[J].AIP Conference Proceedings,2006,817(01):13-22.
[9] Cho SK;Kim SK;Kim JJ .Superconformal Cu electrodeposition using DPS a substitutive accelerator for bis(3-sulfopropyl) disulfide[J].Journal of the Electrochemical Society,2005(5):C330-C333.
[10] Soo-Kil Kim;Soonsik Hwang;Sung Ki Cho .Leveling of Superfilled Damascene Cu Film Using Two-Step Electrodeposition[J].Electrochemical and solid-state letters,2006(2):C25-C28.
[11] LEE C H;CHO S K;KIM J J .Electroless Cu bottom-up filling using 3-N,N-dlmethylaminodithiocarbamoyl-1-propanesulfonic acid[J].Electrochemical and Solid-State Letters,2005,8(11):J27-J29.
[12] Lee, CH;Kim, AR;Kim, SK;Koo, HC;Cho, SK;Kim, JJ .Two-step filling in Cu electroless deposition using a concentration-dependent effect of 3-N,N-dimethylaminodithiocarbamoyl-1-propanesulfonic acid[J].Electrochemical and solid-state letters,2008(1):D18-D21.
[13] KIM J J;LEECH;KIM A R et al.Electroless deposition of Cu and Ag for ULSI interconnect fabrication[J].ECS Transactions,2007,2(06):29-41.
[14] Madoka Hasegawa;Yutaka Okinaka;Yosi Shacham-Diamand .Void-Free Trench-Filling by -Electroless Copper Deposition Using the Combination of Accelerating and Inhibiting Additives[J].Electrochemical and solid-state letters,2006(8):C138-C140.
[15] Madoka HASEGAWA;Noriyuki YAMACHIKA;Yutaka OKINAKA .An Electrochemical Investigation of Additive Effect in Trench-Filling of ULSI Interconnects by Electroless Copper Deposition[J].電気化学および工業物理化学,2007(4):349-358.
[16] Madoka Hasegawa;Noriyuki Yamachika;Yosi Shacham-Diamand;Yutaka Okinaka;Tetsuya Osaka .Evidence for "superfilling" of submicrometer trenches with electroless copper deposit[J].Applied physics letters,2007(10):101916-1-101916-3-0.
[17] Jun Li;Paul A. Kohl .The Deposition Characteristics of Accelerated Nonformaldehyde Electroless Copper Plating[J].Journal of the Electrochemical Society,2003(8):C558-C562.
[18] Jun Li;Paul A. Kohl .The Acceleration of Nonformaldehyde Electroless Copper Plating[J].Journal of the Electrochemical Society,2002(12):C631-C636.
[19] Jun Li;Harley Hayden;Paul A. Kohl .The influence of 2,2/-dipyridyl on non-formaldehyde electroless copper plating[J].Electrochimica Acta,2004(11):1789-1795.
[20] Xueping Gan;Yating Wu;Lei Liu .Effects of K_4Fe(CN)_6 on electroless copper plating using hypophosphite as reducing agent[J].Journal of Applied Electrochemistry,2007(8):899-904.
[21] 甘雪萍,仵亚婷,刘磊,沈彬,胡文彬.以次磷酸钠为还原剂涤纶织物化学镀铜研究[J].功能材料,2007(05):782-786.
[22] 杨防祖,杨斌,陆彬彬,黄令,许书楷,周绍民.以次磷酸钠为还原剂化学镀铜的电化学研究[J].物理化学学报,2006(11):1317-1320.
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