本文以VO(i-OC_2H_5)_3为原料采用溶胶-凝胶浸渍法在三种不同基片上制备了凝胶薄膜,通过真空热处理得到了VO_2薄膜。由于VO_2在67℃左右产生热诱导半导体-金属可逆相变,红外区域透过率在加热前后可变化45%,采用红外光谱及X 射线衍射法分析了VO_2薄膜的结构。
Vanadium dioxide exhibits a thermally-induced reversiblesemiconductor-to-metal phase transition near 67℃.In the present work,VO_2 thin filmshave been prepared by the Sol-Gel dip-coating technique on monocrystalline Si(111),silica glass and soda-lime-silic
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