通过对样品压敏性能和介电性能的测定,研究了CeO2对Nb-TiO2电容-压敏电阻器的影响.研究发现,晶界处硅钛酸铈相的生成使CeO2对Nb-TiO2电容-压敏电阻的性能有显著的影响.在1 350℃烧结条件下,掺杂量为0.4 mol%CeO2的样品表现出优良的综合电性能,其压敏电压为15.84 V/mm,非线性系数α为4.62,并具有很高的相对介电常数(εγ=158 600),较低的介电损耗(tgδ=0.32),是1种具有较好潜力的新型电容-压敏电阻器.
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