利用离子注入和后续高温退火的方法制备了包埋在二氧化硅(SiO2)基质中的硅纳米晶, 研究了不同离子注入浓度试样的微观结构和发光性能, 以及硅纳米晶的生长机理和发光机制. 结果表明: 较小的硅纳米晶(<5 nm)其生长机理符合Ostwald熟化机理, 较大的纳米晶(>10 nm)则是由多个小纳米晶粒通过孪晶组合或融合而成的; 离子注入浓度为8 ×1016cm-2的样品其发光强度是离子注入浓度为3×1017cm -2样品发光强度的5倍；硅纳米晶内部的微观结构缺陷(如孪晶和层错)对其荧光强度有很大的影响.
Si nanocrystals have been fabricated in SiO2 film using ion implantation followed by high-temperature annealing. The microstructure and optical properties of the samples with different Si+ implantation doses were investigated, and the growth mechanism and light emission mechanism were explored. The experimental results indicated that for small Si nanocrystals (<5 nm), the growth mechanism conforms to Ostwald ripening; while for the big ones (>10 nm), the coalescence of small nanoparticles through twinning is dominant. The
photoluminescence (PL) investigation showed that the PL spectrum intensity from the sample with an implantation dose of 3 ×1017/cm2 dropped by a factor of 5 compared with that from the sample with an implantation dose of 8×1016/cm2 . The correlation between microstructure and PL indicated that the microstructural defects, such as twinning and stacking faults inside the Si nanocrystals have a great influence on the PL intensity.
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