采用CVD法在a-面蓝宝石衬底上制备了ZnO籽晶层,然后在籽晶层上用碳热还原法制备了高质量的ZnO纳米线阵列.发现生长后的ZnO纳米线阵列具有良好的近带边发光性能,束缚激子发光峰半峰宽＜500 μeV.通过变温PL测试,确定3.37737eV的发光峰为自由激子发光,分别通过Vina模型和Vashni模型对其进行拟合,发现在60K以下Vashni 模型的拟合相当好,而在60～150K,Vina模型的拟合效果更优.3.29eV处的峰为DAP峰,计算可得样品中的施主浓度为1.8×1018cm-3.
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